Sensor Temperature Range (sensors sold separately)
Cernox® thin-film RTDs offer high sensitivity and low magnetic field-induced errors over the 2 K to 420 K temperature range. Cernox sensors require calibration.
Silicon diodes are the best choice for general cryogenic use from 1.4 K to above room temperature. Diodes are economical to use because they follow a standard curve and are interchangeable in many applications. They are not suitable for use in ionizing radiation or magnetic fields.
Platinum RTDs offer high uniform sensitivity from 30 K to over 800 K. With excellent reproducibility, they are useful as thermometry standards. They follow a standard curve above 70 K and are interchangeable in many applications.
Model | Useful range | Magnetic field use | ||
Negative temperature coefficient RTDs | Cernox® | CX-1010 | 0.3 K to 325 K1 | T > 2 K & B ≤ 19 T |
Cernox® | CX-1030-HT | 0.3 K to 420 K1.3 | T > 2 K & B ≤ 19 T | |
Cernox® | CX-1050-HT | 1.4 K to 420 K1 | T > 2 K & B ≤ 19 T | |
Cernox® | CX-1070-HT | 4 K to 420 K1 | T > 2 K & B ≤ 19 T | |
Cernox® | CX-1080-HT | 20 K to 420 K1 | T > 2 K & B ≤ 19 T | |
Germanium | GR-300-AA | 0.35 K to 100 K3 | Not recommended | |
Germanium | GR-1400-AA | 1.8 K to 100 K3 | Not recommended | |
Carbon-glass | CGR-1-500 | 1.4 K to 325 K | T > 2 K & B ≤ 19 T | |
Carbon-glass | CGR-1-1000 | 1.7 K to 325 K2 | T > 2 K & B ≤ 19 T | |
Carbon-glass | CGR-1-2000 | 2 K to 325 K2 | T > 2 K & B ≤ 19 T | |
Rox™ | RX-102 | 0.3 K to 40 K3 | T > 2 K & B ≤ 10 T | |
Rox™ | RX-103 | 1.4 K to 40 K | T > 2 K & B ≤ 10 T | |
Rox™ | RX-202 | 0.3 K to 40 K3 | T > 2 K & B ≤ 10 T | |
Diodes | Silicon diode | DT-670-SD | 1.4 K to 500 K | T ≥ 60 K & B ≤ 3 T |
Silicon diode | DT-670E-BR | 30 K to 500 K | T ≥ 60 K & B ≤ 3 T | |
Silicon diode | DT-414 | 1.4 K to 375 K | T ≥ 60 K & B ≤ 3 T | |
Silicon diode | DT-421 | 1.4 K to 325 K | T ≥ 60 K & B ≤ 3 T | |
Silicon diode | DT-470-SD | 1.4 K to 500 K | T ≥ 60 K & B ≤ 3 T | |
Silicon diode | DT-471-SD | 10 K to 500 K | T ≥ 60 K & B ≤ 3 T | |
GaAlAs diode | TG-120-P | 1.4 K to 325 K | T > 4.2 K & B ≤ 5 T | |
GaAlAs diode | TG-120-PL | 1.4 K to 325 K | T > 4.2 K & B ≤ 5 T | |
GaAlAs diode | TG-120-SD | 1.4 K to 500 K | T > 4.2 K & B ≤ 5 T | |
Positive temperature coefficient RTDs | 100 Ω platinum | PT-102/3 | 14 K to 873 K | T > 40 K & B ≤ 2.5 T |
100 Ω platinum | PT-111 | 14 K to 673 K | T > 40 K & B ≤ 2.5 T | |
Rhodium-iron | RF-800-4 | 1.4 K to 500 K | T > 77 K & B ≤ 8 T | |
Rhodium-iron | RF-100T/U | 1.4 K to 325 K | T > 77 K & B ≤ 8 T |
1 Non-HT version maximum temperature: 325 K
2 Low temperature limited by input resistance range
3 Low temperature specified with self-heating error: ≤5 mK